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STP23NM60ND - N-channel Power MOSFET

Description

The FDmesh™ II series belongs to the second generation of MDmesh™ technology.

Features

  • www. DataSheet4U. com Type VDSS (@Tjmax) 650 V 650 V 650 V 650 V 650 V RDS(on) max < 0.180 Ω < 0.180 Ω < 0.180 Ω < 0.180 Ω < 0.180 Ω ID 1 3 3 12 STB23NM60ND STI23NM60ND STF23NM60ND STP23NM60ND STW23NM60ND 20 A 20 A 20 A(1) 20 A 20 A D²PAK 2 1 3 I²PAK TO-247 3 1 2 1 2 3 1. Limited by wire bonding.
  • The worldwide best RDS(on).
  • area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistanc.

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Datasheet preview – STP23NM60ND

Datasheet Details

Part number STP23NM60ND
Manufacturer STMicroelectronics
File Size 382.02 KB
Description N-channel Power MOSFET
Datasheet download datasheet STP23NM60ND Datasheet
Additional preview pages of the STP23NM60ND datasheet.

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Full PDF Text Transcription

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STB23NM60ND-STF23NM60ND STI23NM60ND-STP/W23NM60ND N-channel 600 V - 0.150 Ω - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmesh™ II Power MOSFET (with fast diode) Preliminary Data Features www.DataSheet4U.com Type VDSS (@Tjmax) 650 V 650 V 650 V 650 V 650 V RDS(on) max < 0.180 Ω < 0.180 Ω < 0.180 Ω < 0.180 Ω < 0.180 Ω ID 1 3 3 12 STB23NM60ND STI23NM60ND STF23NM60ND STP23NM60ND STW23NM60ND 20 A 20 A 20 A(1) 20 A 20 A D²PAK 2 1 3 I²PAK TO-247 3 1 2 1 2 3 1. Limited by wire bonding ■ ■ ■ ■ ■ The worldwide best RDS(on) * area amongst the fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance High dv/dt and avalanche capabilities TO-220 TO-220FP Figure 1.
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