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STP4403 - P-Channel Enhancement Mode MOSFET

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Description

STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number STP4403
Manufacturer STANSON
File Size 239.36 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet STP4403 Datasheet
Additional preview pages of the STP4403 datasheet.

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STP4403 P Channel Enhancement Mode MOSFET - 10.0A DESCRIPTION STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION SOP-8 FEATURE -20V/-10.0A, RDS(ON) = 30mΩ @VGS = -4.5V -20V/-8.6A, RDS(ON) = 35mΩ @VGS = -2.5V -20V/-7.6A, RDS(ON) = 48mΩ @VGS = -1.
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