Datasheet4U Logo Datasheet4U.com

STP4189D - P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

STP4189D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

📥 Download Datasheet

Datasheet preview – STP4189D

Datasheet Details

Part number STP4189D
Manufacturer STANSON
File Size 567.21 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet STP4189D Datasheet
Additional preview pages of the STP4189D datasheet.
Other Datasheets by STANSON

Full PDF Text Transcription

Click to expand full text
STP4189D P Channel Enhancement Mode MOSFET -12.0A DESCRIPTION STP4189D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP413D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION (D-PAK) FEATURE TO-252 TO-251 -40V/-12.0A, RDS(ON) = 18mΩ (Typ.) @VGS = -10V -40V/-8.0A, RDS(ON) = 24mΩ @VGS =-4.
Published: |