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STP2327 - P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

STP2327 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number STP2327
Manufacturer STANSON
File Size 517.20 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet STP2327 Datasheet
Additional preview pages of the STP2327 datasheet.

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STP2327 P Channel Enhancement Mode MOSFET -1.5A DESCRIPTION STP2327 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-6L FEATURE l -100V/-1.5.0A, RDS(ON) = 520m-ohm (Typ.) @VGS = -10V l -100V/-0.5.0A, RDS(ON) = 600m-ohm @VGS = -4.
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