STU9NC80ZI, STU9NC80Z Datasheet - ST Microelectronics

STU9NC80ZI, STU9NC80Z, N-CHANNEL 800V - 0.82ohm

N-CHANNEL 800V - 0.82Ω - 8.6A Max220/I-Max220 Zener-Protected PowerMESH™III MOSFET TYPE STU9NC80Z STU9NC80ZI s s s s s s STU9NC80Z STU9NC80ZI VDSS 8.
The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-.

STU9NC80Z_STMicroelectronics.pdf

STU9NC80ZI Datasheet Preview — This datasheet PDF includes multiple part numbers: STU9NC80ZI, STU9NC80Z. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

STU9NC80ZI, STU9NC80Z

Manufacturer:

STMicroelectronics ↗

File Size:

407.58 KB

Description:

N-CHANNEL 800V - 0.82ohm

Note:

This datasheet PDF includes multiple part numbers: STU9NC80ZI, STU9NC80Z.
Please refer to the document for exact specifications by model.

Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener vo

Applications

* APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (1) PTOT IGS VESD(G-S) dv/dt(q) VISO Tstg Tj Parameter STU9NC80Z Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source

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STU9NC80Z N-CHANNEL 800V 0.82ohm ST Microelectronics

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