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STU9NC90ZI - N-channel Power MOSFET

STU9NC90ZI Description

N-CHANNEL 900V - 1.1Ω - 7.6A Max220/I-Max220 Zener-Protected PowerMESH™III MOSFET TYPE STU8NC90Z STU9NC90ZI www.DataSheet4U.com s s s s s s STU8NC90Z.
The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-.

STU9NC90ZI Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener vo

STU9NC90ZI Applications

* APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (1) PTOT IGS VESD(G-S) dv/dt(q) VISO Tstg Tj Parameter STU8NC90Z Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source

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N-channel Power MOSFET STMicroelectronics
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