Datasheet4U Logo Datasheet4U.com

STP5NB90FP - N - CHANNEL PowerMESH MOSFET

This page provides the datasheet information for the STP5NB90FP, a member of the STP5NB90 N - CHANNEL PowerMESH MOSFET family.

Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

📥 Download Datasheet

Datasheet preview – STP5NB90FP

Datasheet Details

Part number STP5NB90FP
Manufacturer STMicroelectronics
File Size 44.90 KB
Description N - CHANNEL PowerMESH MOSFET
Datasheet download datasheet STP5NB90FP Datasheet
Additional preview pages of the STP5NB90FP datasheet.

📁 Similar Datasheet

  • STP5NB100 - N-CHANNEL MOSFET (STMicroelectronics)
  • STP5NB100FP - N-CHANNEL MOSFET (STMicroelectronics)
  • STP5N105K5 - N-channel Power MOSFET (STMicroelectronics)
  • STP5N120 - N-Channel Power MOSFET (STMicroelectronics)
  • STP5N60M2 - N-channel Power MOSFET (STMicroelectronics)
  • STP5N62K3 - N-channel MOSFET (STMicroelectronics)
  • STP5N80K5 - N-channel Power MOSFET (STMicroelectronics)
  • STP5N90 - N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR (STMicroelectronics)
  • STP5N90FI - N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR (STMicroelectronics)
  • STP5N95K3 - N-Channel Power MOSFET (STMicroelectronics)
Other Datasheets by ST Microelectronics
  • STP5NB90 - N - CHANNEL PowerMESH MOSFET
  • STP5NB40 - N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
  • STP5NB40FP - N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
  • STP5NB60 - N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET
  • STP5NB80 - N-CHANNEL PowerMESH MOSFET
  • STP5NB80FP - N-CHANNEL PowerMESH MOSFET
  • STP5N60 - N-Channel Enhancement Mode Power MOS Transistor
  • STP5N60FI - N-Channel Enhancement Mode Power MOS Transistor

Full PDF Text Transcription

Click to expand full text
STP5NB90 STP5NB90FP N - CHANNEL 900V - 2.3 Ω - 5A - TO-220/TO-220FP PowerMESH™ MOSFET PRELIMINARY DATA TYPE ST P5NB90 ST P5NB90FP s s s s s V DSS 900 V 900 V R DS(on) < 2.5 Ω < 2.5 Ω ID 5 A 5 A TYPICAL RDS(on) = 2.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 1 2 3 1 2 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
Published: |