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STP5NB100FP - N-CHANNEL MOSFET

Download the STP5NB100FP datasheet PDF. This datasheet also covers the STP5NB100 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

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Note: The manufacturer provides a single datasheet file (STP5NB100-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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STP5NB60 N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET ST Microelectronics
STP5NB80 N-CHANNEL PowerMESH MOSFET ST Microelectronics
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Other Datasheets by STMicroelectronics

Part Number Description
STP5NB100 N-CHANNEL MOSFET
STP5N105K5 N-channel Power MOSFET
STP5N120 N-Channel Power MOSFET
STP5N60M2 N-channel Power MOSFET
STP5N62K3 N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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® STP5NB100 STP5NB100FP N - CHANNEL 1000V - 2.4Ω - 5A - TO-220/TO-220FP PowerMESH™ MOSFET T YPE STP5NB100 STP5NB100F P ν ν ν ν ν V DSS 1000 V 1000 V R DS(on) < 2.7 Ω < 2.7 Ω ID 5 A 5 A TYPICAL RDS(on) = 2.4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 3 2 3 1 2 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
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