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STP5NB40FP - N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

Download the STP5NB40FP datasheet PDF. This datasheet also covers the STP5NB40 variant, as both devices belong to the same n-channel enhancement mode powermesh mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

te cvanced family of power MOSFETs with outstanding le uperformances.

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Note: The manufacturer provides a single datasheet file (STP5NB40_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by STMicroelectronics

Part Number Description
STP5NB40 N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
STP5NB60 N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET
STP5NB80 N-CHANNEL PowerMESH MOSFET
STP5NB80FP N-CHANNEL PowerMESH MOSFET
STP5NB90 N - CHANNEL PowerMESH MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP5NB40 STP5NB40FP N-CHANNEL 400V - 1.47Ω - 4.7A TO-220/TO-220FP PowerMesh™ MOSFET TYPE VDSS RDS(on) ID STP5NB40 400 V < 1.8 Ω 4.7 A STP5NB40FP 400 V < 1.8 Ω 4.7 A s TYPICAL RDS(on) = 1.47 Ω s EXTREMELY HIGH dv/dt CAPABILITY t(s)s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES ucs GATE CHARGE MINIMIZED rod )DESCRIPTION P t(sUsing the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- te cvanced family of power MOSFETs with outstanding le uperformances. The new patent pending strip layout so rodcoupled with the Company’s proprieraty edge termi- nation structure, gives the lowest RDS(on) per area, b Pexceptional avalanche and dv/dt capabilities and - O teunrivalled gate charge and switching characteris- tics.
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