Datasheet4U Logo Datasheet4U.com

STP5NB80FP - N-CHANNEL PowerMESH MOSFET

Download the STP5NB80FP datasheet PDF. This datasheet also covers the STP5NB80 variant, as both devices belong to the same n-channel powermesh mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STP5NB80_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
STP5NB100 N-CHANNEL MOSFET STMicroelectronics
STP5NB100FP N-CHANNEL MOSFET STMicroelectronics
STP5N105K5 N-channel Power MOSFET STMicroelectronics
STP5N120 N-Channel Power MOSFET STMicroelectronics
STP5N60M2 N-channel Power MOSFET STMicroelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STP5NB80 N-CHANNEL PowerMESH MOSFET
STP5NB40 N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
STP5NB40FP N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
STP5NB60 N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET
STP5NB90 N - CHANNEL PowerMESH MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com ® STP5NB80 STP5NB80FP N - CHANNEL 800V - 1.8Ω - 5A - TO-220/TO-220FP PowerMESH™ MOSFET TYPE ST P5NB80 ST P5NB80FP s s s s s V DSS 800 V 800 V R DS(on) < 2.2 Ω < 2.2 Ω ID 5 A 5 A TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 1 2 3 1 2 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
Published: |