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STP5NB100 - N-CHANNEL MOSFET

Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

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Other Datasheets by STMicroelectronics

Part Number Description
STP5NB100FP N-CHANNEL MOSFET
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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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® STP5NB100 STP5NB100FP N - CHANNEL 1000V - 2.4Ω - 5A - TO-220/TO-220FP PowerMESH™ MOSFET T YPE STP5NB100 STP5NB100F P ν ν ν ν ν V DSS 1000 V 1000 V R DS(on) < 2.7 Ω < 2.7 Ω ID 5 A 5 A TYPICAL RDS(on) = 2.4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 3 2 3 1 2 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
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