RU1HP60R - P-Channel Advanced Power MOSFET

Ruichips

RU1HP60R Datasheet Preview — Preview of RU1HP60R PDF

Datasheet Details

Part number	RU1HP60R
Manufacturer	Ruichips
File Size	315.06 KB
Description	P-Channel Advanced Power MOSFET
Datasheet	RU1HP60R-Ruichips.pdf

RU1HP60R Product details

Description

G DS TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain

Features

-100V/-60A, RDS (ON) =18mΩ(Typ. )@VGS=-10V.
Low On-Resistance.
Super High Dense Cell Design.
Fast Switching and Fully Avalanche Rated.
100% avalanche tested.
175°C Operating Temperature.
Lead Free and Green Devices Available (RoHS Compliant).

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Published: Apr 25, 2016 |