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RU1HP55R P-Channel Advanced Power MOSFET

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Description

RU1HP55R P-Channel Advanced Power MOSFET .
G D S TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Volt.

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Datasheet Specifications

Part number
RU1HP55R
Manufacturer
Ruichips
File Size
443.62 KB
Datasheet
RU1HP55R-Ruichips.pdf
Description
P-Channel Advanced Power MOSFET

Features

* -100V/-55A, RDS (ON) =40mΩ(Typ. )@VGS=-10V
* Low On-Resistance
* Super High Dense Cell Design
* Fast Switching and Fully Avalanche Rated
* 100% avalanche tested
* 175°C Operating Temperature
* Lead Free and Green Devices Available (RoHS Compli

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