RU1HP55R - P-Channel Advanced Power MOSFET

Ruichips

RU1HP55R Datasheet Preview — Preview of RU1HP55R PDF

Datasheet Details

Part number	RU1HP55R
Manufacturer	Ruichips
File Size	443.62 KB
Description	P-Channel Advanced Power MOSFET
Datasheet	RU1HP55R-Ruichips.pdf

RU1HP55R Product details

Description

G D S TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=-10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Drain-Source

Features

-100V/-55A, RDS (ON) =40mΩ(Typ. )@VGS=-10V.
Low On-Resistance.
Super High Dense Cell Design.
Fast Switching and Fully Avalanche Rated.
100% avalanche tested.
175°C Operating Temperature.
Lead Free and Green Devices Available (RoHS Compliant).

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Published: Apr 25, 2016 |