RU1HP60Q - P-Channel Advanced Power MOSFET

Ruichips

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Datasheet Details

Part number: RU1HP60Q
Manufacturer: Ruichips
File Size: 683.56 KB
Datasheet: RU1HP60Q-Ruichips.pdf
Description: P-Channel Advanced Power MOSFET

RU1HP60Q Product details

Description

G DS TO247 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Drain-Source Avalan

Features

-100V/-60A, RDS (ON) =18mΩ(Typ. )@VGS=-10V.
Low On-Resistance.
Super High Dense Cell Design.
Fast Switching and Fully Avalanche Rated.
100% avalanche tested.

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Published: Apr 10, 2017 |