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RU1H130Q N-Channel Advanced Power MOSFET

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Description

RU1H130Q N-Channel Advanced Power MOSFET .
G D S TO247 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-.

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Datasheet Specifications

Part number
RU1H130Q
Manufacturer
Ruichips
File Size
277.55 KB
Datasheet
RU1H130Q-Ruichips.pdf
Description
N-Channel Advanced Power MOSFET

Features

* 100V/130A, RDS (ON) =7mΩ(Typ. )@VGS=10V
* Super High Dense Cell Design
* Ultra Low On-Resistance
* 100% avalanche tested

Applications

* High Efficiency Synchronous Rectification in SMPS

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