RU1H100 - N-Channel Advanced Power MOSFET

Ruichips

RU1H100 Datasheet Preview — Preview of RU1H100 PDF

Datasheet Details

Part number	RU1H100
Manufacturer	Ruichips
File Size	440.44 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU1H100-Ruichips.pdf

RU1H100 Product details

Description

TO-220 TO-220F TO-247 TO-263 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300µs Pulsed Drain Current Tested ID Continue Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance -Junction to Case RθJA Thermal Resistance-Junction

Features

100V/75A RDS (ON)=11mΩ(Typ. ) @ VGS=10V.
Ultra Low On-Resistance.
Extremely high dv/dt capability.
Fast Switching and Fully Avalanche Rated.
100% avalanche tested.

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Published: Apr 25, 2016 |