Datasheet Details
- Part number
- TP65H150G4PS
- Manufacturer
- Renesas ↗
- File Size
- 923.41 KB
- Datasheet
- TP65H150G4PS-Renesas.pdf
- Description
- 650V GaN FET
TP65H150G4PS Description
Specifications in this document are tentative and subject to change Datasheet TP65H150G4PS 650V SuperGaN® GaN FET in TO-220 (source tab) ).
Preliminary Datasheet
The TP65H150G4PS 650V, 150mΩ Gallium Nitride
(GaN) FET is a normally-off device.
TP65H150G4PS Features
* Gen IV technology
* JEDEC-qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Wide gate safety margin
* Transient over-voltage capability
* Very low QRR
* Reduced crossover loss
* RoHS compliant and Halogen-free
TP65H150G4PS Applications
* TP65H150G4PS 3 lead TO-220
Source
* Consumer
TP65H150G4PS TO-220
(top view) S
* Power adapters
* Low power SMPS
* Lighting
G SD
Key Specifications
VDS (V) min VDSS(TR) (V) max RDS(on) (mΩ) max
* 650 800 180
Qoss (nC) typ
34
QG (nC) typ
8
* Dynamic R ; DS(on) see
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