Datasheet Details
- Part number
- TP65H150BG4JSG
- Manufacturer
- Renesas ↗
- File Size
- 826.98 KB
- Datasheet
- TP65H150BG4JSG-Renesas.pdf
- Description
- 650V GaN FET
TP65H150BG4JSG Description
Specifications in this document are tentative and subject to change Datasheet TP65H150BG4JSG 650V SuperGaN® GaN FET in PQFN (source tab) .
The TP65H150BG4JSG 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform.
TP65H150BG4JSG Features
* Gen IV technology
* JEDEC-qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Wide gate safety margin
* Transient over-voltage capability
* Very low QRR
* Reduced crossover loss
* RoHS compliant and Halogen-free
TP65H150BG4JSG Applications
* Consumer
* Power adapters
* Low power SMPS
* Lighting
Key Specifications
VDS (V) min
650
VDSS(TR) (V) max
800
RDS(on) (mΩ) max
* 180
Qoss (nC) typ
35
QG (nC) typ
8.8
* Dynamic R ; DS(on) see Figures 18 and 19
TP65H150BG4JSG.3v3 Nov 07, 2023
Page 1 © 2024 Renesa
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