Datasheet Details
- Part number
- TP65H100G4LSGB
- Manufacturer
- Renesas ↗
- File Size
- 848.69 KB
- Datasheet
- TP65H100G4LSGB-Renesas.pdf
- Description
- 650V SuperGaN GaN FET
TP65H100G4LSGB Description
Specifications in this document are tentative and subject to change Datasheet TP65H100G4LSGB 650V SuperGaN® GaN FET in PQFN (source tab) .
The TP65H100G4LSGB 650V, 92mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform.
TP65H100G4LSGB Features
* Gen IV technology
* JEDEC-qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Wide gate safety margin
* Transient over-voltage capability
* Very low QRR
* Reduced crossover loss
* RoHS compliant and Halogen-free
TP65H100G4LSGB Applications
* Consumer
* Power adapters
* Low power SMPS
* Lighting
Key Specifications
VDS (V) min VDSS(TR) (V) max RDS(on) (mΩ) max
* QOSS (nC) typ QG (nC) typ
* Dynamic R ; DS(on) see Figures 18 and 19
650 800 110 56 14.4
TP65H100G4LSGB.1v1 Mar 18, 2024
Page 1 © 2024 Renesas Electro
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