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TP65H035G4QS - 650V SuperGaN FET

Renesas

The TP65H035G4QS by Renesas is a 650V SuperGaN FET. Below is the official datasheet preview.

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TP65H035G4QS 650V SuperGaN FET by Renesas - Datasheet Preview — Official preview page of the TP65H035G4QS 650V SuperGaN FET datasheet (Renesas).

Datasheet Details

Part number	TP65H035G4QS
Manufacturer	Renesas
File Size	1.03 MB
Description	650V SuperGaN FET
Datasheet	TP65H035G4QS-Renesas.pdf
Additional preview pages of the TP65H035G4QS datasheet.

TP65H035G4QS Product details

Description

The TP65H035G4QS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform.

Features

JEDEC qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Wide gate safety margin.
Transient over-voltage capability.
Enhanced inrush current capability.
Very low QRR.
Reduced crossover loss.
Kelvin source for low inductance gate return path Benefits.
Enables AC-DC bridgeless totem-pole PFC designs.
Increased power density.
Reduced system size and weight.
Overall lower sys.

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Published: Jan 30, 2025 |