TP65H035G4QS 650V SuperGaN FET

Renesas

Description

Specifications in this document are tentative and subject to change Datasheet TP65H035G4QS 650V SuperGaN® FET in TOLL (source tab) .
The TP65H035G4QS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform.

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Datasheet Specifications

Part number: TP65H035G4QS
Manufacturer: Renesas ↗
File Size: 1.03 MB
Datasheet: TP65H035G4QS-Renesas.pdf
Description: 650V SuperGaN FET

Features

* JEDEC qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Wide gate safety margin
* Transient over-voltage capability
* Enhanced inrush current capability
* Very low QRR
* Reduced crossover loss
* Kelvin source f

Applications

* Datacom
* Broad industrial
* PV inverter
* Servo motor Pin 8 D Pin 12 Pin 1 G KS S Cascode Schematic Symbol Cascode Device Structure Key Specifications VDSS (V) V(TR)DSS (V) RDS(on)eff (mΩ) max
* QRR (nC) typ 650 800 41 150 QG (nC) typ 22
* Dynamic on-resistance; ;

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TP65H035G4QS 650V SuperGaN FET Renesas

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