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RJP60V0DPM-80 IGBT

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Description

RJP60V0DPM-80 600V - 22A - IGBT Application: Inverter .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Features

* High breakdown-voltage
* Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)
* Short circuit withstand time (6 μs typ. )
* Trench gate and thin wafer technology (G6H series) Outline RENESAS Package code: PRSS0003ZD-

Applications

* for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; an

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RJP60V0DPM-80 IGBT Renesas
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