RJP30E3DPP-M0 N-Channel Power MOSFET

Renesas

RJP30E3DPP-M0 Description

Preliminary Datasheet RJP30E3DPP-M0 Silicon N Channel IGBT High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJP30E3DPP-M0 Features

* Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 μA max Isolated package TO-220FL R07DS0353EJ0200 Rev.2.00 Apr 15, 2011 Outline RENESA

RJP30E3DPP-M0 Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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Datasheet Details

Part number: RJP30E3DPP-M0
Manufacturer: Renesas ↗
File Size: 251.48 KB
Datasheet: RJP30E3DPP-M0_Renesas.pdf
Description: N-Channel Power MOSFET

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N-Channel Power MOSFET Renesas

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