RJP30H1, RJP30H1DPD Datasheet - Renesas

RJP30H1, RJP30H1DPD, N-Channel IGBT

RJP30H1DPD Silicon N Channel IGBT High speed power switching .

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RJP30H1DPD_Renesas.pdf

RJP30H1 Datasheet Preview — This datasheet PDF includes multiple part numbers: RJP30H1, RJP30H1DPD. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

RJP30H1, RJP30H1DPD

Manufacturer:

Renesas ↗

File Size:

212.44 KB

Description:

N-Channel IGBT

Note:

This datasheet PDF includes multiple part numbers: RJP30H1, RJP30H1DPD.
Please refer to the document for exact specifications by model.

Features

* Trench gate and thin wafer technology (G6H-II series)
* High speed switching: tr = 80 ns typ. , tf = 150 ns typ.
* Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.
* Low leak current: ICES = 1 A max. Outline RENESAS Package code: PRSS0004ZJ-A (Package name : TO-

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RJP30H1DPD N-Channel IGBT Renesas

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