RJP30H2DPK-M0 Datasheet - Renesas

RJP30H2DPK-M0, N-Channel Power MOSFET

Preliminary Datasheet RJP30H2DPK-M0 Silicon N Channel IGBT High speed power switching .
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Datasheet Details

Part number:

RJP30H2DPK-M0

Manufacturer:

Renesas ↗

File Size:

221.13 KB

Description:

N-Channel Power MOSFET

Features

* Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Outline RENESAS Package code

Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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RJP30H2DPK-M0 N-Channel Power MOSFET Renesas

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