RJP30H2DPK-M0 N-Channel Power MOSFET

Renesas

RJP30H2DPK-M0 Description

Preliminary Datasheet RJP30H2DPK-M0 Silicon N Channel IGBT High speed power switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJP30H2DPK-M0 Features

* Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Outline RENESAS Package code

RJP30H2DPK-M0 Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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Datasheet Details

Part number: RJP30H2DPK-M0
Manufacturer: Renesas ↗
File Size: 221.13 KB
Datasheet: RJP30H2DPK-M0_Renesas.pdf
Description: N-Channel Power MOSFET

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N-Channel Power MOSFET Renesas

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