Datasheet4U Logo Datasheet4U.com

RJP30H2A Silicon N-Channel IGBT

RJP30H2A Description

Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A Silicon N Channel IGBT High speed power switching R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 .

RJP30H2A Features

* Trench gate and thin wafer technology (G6H-II series)
* Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ
* High speed switching: tf = 100 ns typ, tf = 180 ns typ
* Low leak current: ICES = 1 A max Outline RENESAS Package code: PRSS0004ZH-A (Package name: TO-3PSG

📥 Download Datasheet

Preview of RJP30H2A PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

📌 All Tags

Silicon N-Channel IGBT Renesas
Renesas RJP30H2A-like datasheet