RJP30H2A Datasheet - Renesas

RJP30H2A, Silicon N-Channel IGBT

Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A Silicon N Channel IGBT High speed power switching R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 .

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Datasheet Details

Part number:

RJP30H2A

Manufacturer:

Renesas ↗

File Size:

226.18 KB

Description:

Silicon N-Channel IGBT

Features

* Trench gate and thin wafer technology (G6H-II series)
* Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ
* High speed switching: tf = 100 ns typ, tf = 180 ns typ
* Low leak current: ICES = 1 A max Outline RENESAS Package code: PRSS0004ZH-A (Package name: TO-3PSG

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RJP30H2A Silicon N-Channel IGBT Renesas

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