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RJP30H1DPD N-Channel IGBT

RJP30H1DPD Description

Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJP30H1DPD Features

* Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ. , tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 Outline RENESAS Package c

RJP30H1DPD Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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