RJP30H1DPD Datasheet - Renesas

RJP30H1DPD, N-Channel IGBT

Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

datasheet Preview Page 1 from Datasheet4u.com

RJP30H1DPD_Renesas.pdf

RJP30H1DPD Datasheet Preview — Preview of RJP30H1DPD PDF

Datasheet Details

Part number:

RJP30H1DPD

Manufacturer:

Renesas ↗

File Size:

212.44 KB

Description:

N-Channel IGBT

Features

* Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ. , tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 Outline RENESAS Package c

Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

RJP30H1DPD Distributors

📁 Related Datasheet

RJP3053DPP RJP3054DPP RJP3055DPP RJP3056DPK RJP3057DPK RJP3063DPP

📌 All Tags

RJP30H1DPD N-Channel IGBT Renesas

Renesas RJP30H1DPD-like datasheet