RJP30E3DPK-M0 Datasheet - Renesas

RJP30E3DPK-M0, N-Channel Power MOSFET

Preliminary Datasheet RJP30E3DPK-M0 Silicon N Channel IGBT High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Datasheet Details

Part number:

RJP30E3DPK-M0

Manufacturer:

Renesas ↗

File Size:

213.96 KB

Description:

N-Channel Power MOSFET

Features

* Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 μA max R07DS0352EJ0200 Rev.2.00 Apr 15, 2011 Outline RENESAS Package code: PRSS0004ZH-A (Packag

Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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