Datasheet Details
- Part number
- RJP30E2DPP-M0
- Manufacturer
- Renesas ↗
- File Size
- 213.25 KB
- Datasheet
- RJP30E2DPP-M0_Renesas.pdf
- Description
- N-Channel Power MOSFET
RJP30E2DPP-M0 Description
Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching .RJP30E2DPP-M0 Features
* Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 μA max Isolated package TO-220FL R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Outline RENESARJP30E2DPP-M0 Applications
* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law
📁 Related Datasheet
📌 All Tags