RJP30E2DPP-M0 Datasheet - Renesas

RJP30E2DPP-M0, N-Channel Power MOSFET

Preliminary Datasheet RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

datasheet Preview Page 1 from Datasheet4u.com

RJP30E2DPP-M0_Renesas.pdf

RJP30E2DPP-M0 Datasheet Preview — Preview of RJP30E2DPP-M0 PDF

Datasheet Details

Part number:

RJP30E2DPP-M0

Manufacturer:

Renesas ↗

File Size:

213.25 KB

Description:

N-Channel Power MOSFET

Features

* Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 μA max Isolated package TO-220FL R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Outline RENESA

Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

RJP30E2DPP-M0 Distributors

📁 Related Datasheet

RJP3053DPP RJP3054DPP RJP3055DPP RJP3056DPK RJP3057DPK RJP3063DPP

📌 All Tags

RJP30E2DPP-M0 N-Channel Power MOSFET Renesas

Renesas RJP30E2DPP-M0-like datasheet