RJK6025DPD N-Channel Power MOSFET

Renesas

Description

Preliminary Datasheet RJK6025DPD 600V - 1A - MOS FET High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Datasheet Specifications

Part number: RJK6025DPD
Manufacturer: Renesas ↗
File Size: 135.74 KB
Datasheet: RJK6025DPD_Renesas.pdf
Description: N-Channel Power MOSFET

Features

* Low on-resistance RDS(on) = 13.5  typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C)
* Low drive current
* High density mounting R07DS0676EJ0100 Rev.1.00 Feb 17, 2012 Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain D G 12 3 S Abso

Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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RJK6025DPD N-Channel Power MOSFET Renesas

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