RJK6024DP3-A0 High Speed Power Switching MOS FET

Renesas Technology

Description

RJK6024DP3-A0 600 V - 0.4 A - MOS FET High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Datasheet Specifications

Part number: RJK6024DP3-A0
Manufacturer: Renesas ↗ Technology
File Size: 143.04 KB
Datasheet: RJK6024DP3-A0-RenesasTechnology.pdf
Description: High Speed Power Switching MOS FET

Features

* Low on-resistance RDS(on) = 28 Ω typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25°C)
* Low leakage current
* High speed switching Outline RENESAS Package code: PRSP0004ZB-A (Package name: SOT-223) 4 3 2 1 G Absolute Maximum Ratings Item Drain to source voltage Gate to source vol

Applications

* for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; an

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