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RJK6025DPE - Silicon N Channel MOS FET High Speed Power Switching

Renesas Technology

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Datasheet Details

Part number	RJK6025DPE
Manufacturer	Renesas ↗ Technology
File Size	100.93 KB
Description	Silicon N Channel MOS FET High Speed Power Switching
Datasheet	RJK6025DPE_RenesasTechnology.pdf

RJK6025DPE Product details

Features

Low on-resistance RDS(on) = 13 Ω typ. (at ID =0.4 A, VGS = 10 V, Ta = 25°C).
Low leakage current.
High speed switching REJ03G1870-0100 Rev.1.00 Dec 08, 2009 Outline.

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Published: Jul 23, 2010 |