RJK6025DPE Silicon N Channel MOS FET High Speed Power Switching

Renesas Technology

Description

www.DataSheet4U.com RJK6025DPE Silicon N Channel MOS FET High Speed Power Switching .

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Datasheet Specifications

Part number: RJK6025DPE
Manufacturer: Renesas ↗ Technology
File Size: 100.93 KB
Datasheet: RJK6025DPE_RenesasTechnology.pdf
Description: Silicon N Channel MOS FET High Speed Power Switching

Features

* Low on-resistance RDS(on) = 13 Ω typ. (at ID =0.4 A, VGS = 10 V, Ta = 25°C)
* Low leakage current
* High speed switching REJ03G1870-0100 Rev.1.00 Dec 08, 2009 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source 4. Drain

Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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RJK6025DPE Silicon Channel MOS FET High Speed Power Switching Renesas Technology

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