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RJK6002DPH-E0 MOS FET

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Description

Preliminary Datasheet RJK6002DPH-E0 600V - 2A - MOS FET High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Features

* Low on-resistance RDS(on) = 5.7  typ. (at ID = 1 A, VGS = 10 V, Ta = 25C)
* Low leakage current
* High speed switching R07DS1047EJ0100 Rev.1.00 Mar 21, 2013 Outline RENESAS Package code: PRSS0004ZJ-B (Package name: TO-251) 4 1. 2. 3. 4. Gate Drain Source Drain D G 12 3 S Absolut

Applications

* for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; an

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