RJK6002DPD Silicon N Channel MOS FET High Speed Power Switching

Renesas Technology

Description

www.DataSheet4U.com RJK6002DPD Silicon N Channel MOS FET High Speed Power Switching REJ03G1483-0100 Rev.1.00 Nov 09, 2006 .

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Datasheet Specifications

Part number: RJK6002DPD
Manufacturer: Renesas ↗ Technology
File Size: 97.47 KB
Datasheet: RJK6002DPD_RenesasTechnology.pdf
Description: Silicon N Channel MOS FET High Speed Power Switching

Features

* Low on-resistance
* Low leakage current
* High speed switching Outline RENESAS Package code: PRSS0004ZA-A (Package name : MP-3A) 4 1. 2. 3. 4. Gate Drain Source Drain 2, 4 1 12 3 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage

Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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RJK6002DPD Silicon Channel MOS FET High Speed Power Switching Renesas Technology

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