RJK6024DPD - Silicon N Channel MOS FET High Speed Power Switching

Renesas Technology

RJK6024DPD Datasheet Preview — Preview of RJK6024DPD PDF

Datasheet Details

Part number	RJK6024DPD
Manufacturer	Renesas ↗ Technology
File Size	101.10 KB
Description	Silicon N Channel MOS FET High Speed Power Switching
Datasheet	RJK6024DPD_RenesasTechnology.pdf

RJK6024DPD Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Low on-resistance RDS(on) = 28  typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C).
Low drive current.
High density mounting REJ03G1936-0100 Rev.1.00 Jun 01, 2010 Outline.

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Published: Jul 23, 2010 |