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RJK0236DPA Built in SBD N Channel Power MOS FET

RJK0236DPA Description

Preliminary Datasheet RJK0236DPA 25V, 50A, 1.8mΩmax.Built in SBD N Channel Power MOS FET High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJK0236DPA Features

* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free R07DS0792EJ0200 Rev.2.00 Mar 22, 2013 Outline RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 5 6 7 8 D D D D 5 6 7

RJK0236DPA Applications

* for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; an

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Built SBD Channel Power MOS FET Renesas
Renesas RJK0236DPA-like datasheet