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RJK0210DPA N-Channel MOSFET

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Description

Preliminary Datasheet RJK0210DPA Silicon N Channel Power MOS FET Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Features

* Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 10 V)
* Pb-free
* Halogen-free REJ03G1948-0021 Rev.0.21 Jul 02, 2010 Outline RENESAS Package code: PWSN0008DC-A (Pack

Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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