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RJK0216DPA Silicon N Channel Power MOS FET

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Description

Preliminary Datasheet RJK0216DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0208EJ0110 Rev.1.10 .

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Features

* Low on-resistance
* Capable of 4.5 V gate drive
* High density mounting
* Pb-free
* Halogen-free Outline RENESAS Package code: PWSN0008DD-A (Package name: WPAK-D(2)) 5 678 1 G1 234 D1 D1 D1 8 G2 4 32 1 MOS1 9 S1/D2 5678 9 S2 S2 S2 56 7 4321 (Bottom View) MOS2 and

RJK0216DPA Distributors

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