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RJK0230DPA Silicon N Channel Power MOS FET

RJK0230DPA Description

Preliminary Datasheet RJK0230DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0541EJ0110 High Speed Power Switching Rev.1.10 Sep .

RJK0230DPA Features

* Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DD-B (Package name: WPAK-D(3)) 2 3 4 D1 D1 D1 9 S1/D2 5 6 7 8 5 6 7 8 1 G1 8 G2 9 4 3 2 1 4 S2 S2 S2 5 6 7 3 2 1 (Bottom View) 1, 8 Gate 2,

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Silicon Channel Power MOS FET Renesas
Renesas RJK0230DPA-like datasheet