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RJK0230DPA Silicon N Channel Power MOS FET

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Description

Preliminary Datasheet RJK0230DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0541EJ0110 High Speed Power Switching Rev.1.10 Sep .

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Datasheet Specifications

Part number
RJK0230DPA
Manufacturer
Renesas ↗
File Size
239.50 KB
Datasheet
RJK0230DPA_Renesas.pdf
Description
Silicon N Channel Power MOS FET

Features

* Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DD-B (Package name: WPAK-D(3)) 2 3 4 D1 D1 D1 9 S1/D2 5 6 7 8 5 6 7 8 1 G1 8 G2 9 4 3 2 1 4 S2 S2 S2 5 6 7 3 2 1 (Bottom View) 1, 8 Gate 2,

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