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RJK0328DPB-01 Silicon N-Channel MOS FET

RJK0328DPB-01 Description

RJK0328DPB-01 Silicon N Channel Power MOS FET Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJK0328DPB-01 Features

* High speed switching
* Capable of 4.5 V gate drive
* Low drive current
* High density mounting
* Low on-resistance RDS(on) = 1.6 m typ. (at VGS = 10 V)
* Pb-free
* Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 4 G Preliminary

RJK0328DPB-01 Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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Silicon N-Channel MOS FET Renesas
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