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RJK03A04DPA Silicon N Channel Power MOS FET

RJK03A04DPA Description

Preliminary Datasheet RJK03A04DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1828-0210 Power Switching Rev.2.10 May 13, 2010 .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJK03A04DPA Features

* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.9 m typ. (at VGS = 10 V)
* Pb-free
* Halogen-free
* Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8 D D D D 5 6 7 8

RJK03A04DPA Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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Silicon Channel Power MOS FET Renesas
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