Datasheet Specifications
- Part number
- RJK03A4DPA
- Manufacturer
- Renesas ↗
- File Size
- 263.51 KB
- Datasheet
- RJK03A4DPA_Renesas.pdf
- Description
- Silicon N Channel Power MOS FET
Description
Preliminary RJK03A4DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1828-0200 Power Switching Rev.2.00 Sep 29, 2009 .
Features
* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.9 mΩ typ. (at VGS = 10 V)Applications
* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informatRJK03A4DPA Distributors
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