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RJK03A4DPA Silicon N Channel Power MOS FET

RJK03A4DPA Description

Preliminary RJK03A4DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1828-0200 Power Switching Rev.2.00 Sep 29, 2009 .

RJK03A4DPA Features

* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.9 mΩ typ. (at VGS = 10 V)
* Pb-free
* Halogen-free
* Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK)

RJK03A4DPA Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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Silicon Channel Power MOS FET Renesas
Renesas RJK03A4DPA-like datasheet