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RJK0305DPB Silicon N Channel Power MOS FET Power Switching

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www.DataSheet4U.com RJK0305DPB Silicon N Channel Power MOS FET Power Switching REJ03G1353-0900 Rev.9.00 Apr 19, 2006 .

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Features

* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.7 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 3 12 4 1, 2, 3 4 5 Source Gat

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