Datasheet Details
- Part number
- RJK0206DPA
- Manufacturer
- Renesas ↗ Technology
- File Size
- 106.53 KB
- Datasheet
- RJK0206DPA_RenesasTechnology.pdf
- Description
- Silicon N Channel Power MOS FET
RJK0206DPA Description
Preliminary www.DataSheet4U.com Datasheet RJK0206DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1923-0200 Power Switching Rev..RJK0206DPA Features
* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.5 m typ. (at VGS = 10 V)RJK0206DPA Applications
* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law
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