NP80N055MDG N-CHANNEL POWER MOS FET

Renesas

Description

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055MDG, NP80N055NDG, NP80N055PDG SWITCHING N-CHANNEL POWER MOS FET .
The NP80N055MDG, NP80N055NDG, and NP80N055PDG are N-channel MOS Field Effect Transistors designed for high current switching applications.

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Datasheet Specifications

Part number: NP80N055MDG
Manufacturer: Renesas ↗
File Size: 287.04 KB
Datasheet: NP80N055MDG-Renesas.pdf
Description: N-CHANNEL POWER MOS FET

Features

* Logic level
* Super low on-state resistance - NP80N055MDG, NP80N055NDG RDS(on)1 = 6.9 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 11.2 mΩ MAX. (VGS = 4.5 V, ID = 35 A) - NP80N055PDG RDS(on)1 = 6.6 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 10.9 mΩ MAX. (VGS = 4.5 V, ID = 35 A)

Applications

* ORDERING INFORMATION PART NUMBER NP80N055MDG-S18-AY Note NP80N055NDG-S18-AY Note NP80N055PDG-E1B-AY Note NP80N055PDG-E2B-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tube 50 p/tube Tape 1000 p/reel Note Pb-free (This product does not contain Pb in the external electrode. ) PACKAGE TO-220 (MP-25K

NP80N055MDG Distributors

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NP80N055MDG N-CHANNEL POWER MOS FET Renesas

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