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NP80N04MDG N-CHANNEL POWER MOS FET

NP80N04MDG Description

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N04MDG, NP80N04NDG, NP80N04PDG SWITCHING N-CHANNEL POWER MOS FET .
The NP80N04MDG, NP80N04NDG, and NP80N04PDG are N-channel MOS Field Effect Transistors designed for high current switching applications.

NP80N04MDG Features

* Logic level
* Super low on-state resistance - NP80N04MDG, NP80N04NDG RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A) - NP80N04PDG RDS(on)1 = 4.5 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 8.7 mΩ MAX. (VGS = 4.5 V, ID = 35 A)

NP80N04MDG Applications

* ORDERING INFORMATION PART NUMBER NP80N04MDG-S18-AY Note NP80N04NDG-S18-AY Note NP80N04PDG-E1B-AY Note NP80N04PDG-E2B-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tube 50 p/tube Tape 1000 p/reel Note Pb-free (This product does not contain Pb in the external electrode. ) PACKAGE TO-220 (MP-25K) ty

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