Description
DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N04EHE, NP80N04KHE NP80N04CHE, NP80N04DHE, NP80N04MHE, NP80N04NHE SWITCHING N-CHANNEL POWER MOS FET DESCR.
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Features
* Channel temperature 175 degree rated
* Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A)
* Low input capacitance Ciss = 2200 pF TYP.
* Built-in gate protection diode (TO-262)
(TO-263)
The information in this document is subject to change
Applications
* ORDERING INFORMATION
PART NUMBER NP80N04EHE-E1-AY NP80N04EHE-E2-AY NP80N04KHE-E1-AY NP80N04KHE-E2-AY
Note1, 2 Note1, 2 Note1 Note1 Note1, 2 Note1, 2 Note1 Note1
LEAD PLATING
PACKING
PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g
Pure Sn (Tin)
Tape 800 p/reel TO-263 (MP-25ZK) typ. 1.5 g
NP80N04CHE-S12-A