Description
DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055EHE, NP80N055KHE NP80N055CHE, NP80N055DHE, NP80N055MHE, NP80N055NHE SWITCHING N-CHANNEL POWER MOS FET .
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
* Channel temperature 175 degree rated
* Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A)
* Low input capacitance Ciss = 2400 pF TYP.
* Built-in gate protection diode (TO-262)
(TO-263)
The information in this document is subject to change w
Applications
* ORDERING INFORMATION
PART NUMBER NP80N055EHE-E1-AY NP80N055EHE-E2-AY NP80N055KHE-E1-AY NP80N055KHE-E2-AY
Note1, 2 Note1, 2 Note1 Note1 Note1, 2 Note1, 2 Note1 Note1
LEAD PLATING
PACKING
PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g
Pure Sn (Tin)
Tape 800 p/reel TO-263 (MP-25ZK) typ. 1.5 g
NP80N05