Description
DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055MDG, NP80N055NDG, NP80N055PDG SWITCHING N-CHANNEL POWER MOS FET .
The NP80N055MDG, NP80N055NDG, and NP80N055PDG are N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
* Logic level
* Super low on-state resistance
- NP80N055MDG, NP80N055NDG RDS(on)1 = 6.9 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 11.2 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
- NP80N055PDG RDS(on)1 = 6.6 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 10.9 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
Applications
* ORDERING INFORMATION
PART NUMBER NP80N055MDG-S18-AY Note NP80N055NDG-S18-AY Note NP80N055PDG-E1B-AY Note NP80N055PDG-E2B-AY Note
LEAD PLATING Pure Sn (Tin)
PACKING Tube
50 p/tube
Tape 1000 p/reel
Note Pb-free (This product does not contain Pb in the external electrode. )
PACKAGE TO-220 (MP-25K