NP80N055 - Switching N-Channel Power MOS FET

NEC Electronics

NP80N055 Datasheet Preview — Preview of NP80N055 PDF

Datasheet Details

Part number	NP80N055
Manufacturer	NEC Electronics
File Size	110.99 KB
Description	Switching N-Channel Power MOS FET
Datasheet	NP80N055_NECElectronics.pdf

NP80N055 Product details

Description

These products are N-channel MOS Field Effect www.DataSheet4U.com Transistor designed for high current switching ORDERING INFORMATION PART NUMBER NP80N055CLE NP80N055DLE PACKAGE TO-220AB TO-262 TO-263 applications.

Features

Channel temperature 175 degree rated.
Super low on-state resistance RDS(on)1 = 11 m Ω MAX. (VGS = 10 V, I D = 40 A) RDS(on)2 = 13 m Ω MAX. (VGS = 5 V, I D = 40 A).
Low Ciss : Ciss = 2900 pF TYP.
Built-in gate protection diode NP80N055ELE (TO-220AB).

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Other Datasheets by NEC Electronics

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Published: Aug 31, 2005 |