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RJK03P9DPA - Built in SBD Dual N-channel Power MOS FET

Renesas Technology

The RJK03P9DPA by Renesas Technology is a Built in SBD Dual N-channel Power MOS FET. Below is the official datasheet preview.

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RJK03P9DPA Built in SBD Dual N-channel Power MOS FET by Renesas Technology - Datasheet Preview — Official preview page of the RJK03P9DPA Built in SBD Dual N-channel Power MOS FET datasheet (Renesas Technology).

Datasheet Details

Part number	RJK03P9DPA
Manufacturer	Renesas Technology
File Size	413.68 KB
Description	Built in SBD Dual N-channel Power MOS FET
Datasheet	RJK03P9DPA-RenesasTechnology.pdf
Additional preview pages of the RJK03P9DPA datasheet.

RJK03P9DPA Product details

Features

Low on-resistance.
Capable of 4.5 V gate drive.
High density mounting.
Pb-free.
Halogen-free Outline.

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Published: Aug 17, 2015 |